| PART |
Description |
Maker |
| NAND01GW4A2CZB1 NAND01GW4A2AZB1T NAND512R3A0AN1E N |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 128兆，256兆，512兆位千兆位（x8/x1628 Byte/264字的页面.8V/3V，NAND闪存芯片
|
意法半导
STMicroelectronics N.V.
|
| LC87FBL08A |
8K-byte FROM and 256-byte RAM integrated 8-bit 1-chip Microcontroller
|
Sanyo Semicon Device
|
| NAND02G-B2C NAND02GR3B2BZA1E NAND02GR4B2BZA1F NAND |
1千兆2千兆位，2112 Byte/1056字的页面.8V/3VNAND闪存
1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 1千兆千兆位，2112 Byte/1056字的页面.8V/3V，NAND闪存
|
意法半导
STMicroelectronics N.V.
|
| NAND02GR3B2BZA1 NAND02GR4B2BZA6 NAND02GR3B2BZB1 NA |
1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 1千兆千兆位，2112 Byte/1056字的页面.8V/3V，NAND闪存
1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 1千兆千兆位，2112 Byte/1056字的页面1.8V/3V，NAND闪存
|
意法半导
STMicroelectronics N.V.
|
| LC87F40C8A |
Internal 128K-byte FROM (ROM/CGROM), 2048 byte RAM, 1024-byte CGRAM, and 704×10-bit CRT Display RAM 8-bit 1-chip Microcontroller
|
Sanyo Semicon Device
|
| MSM511666CL-60TS-K MSM511666CL-70TS-K MSM511666CL- |
65,536-Word X 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO (BYTE WRITE)
|
OKI electronic componets
|
| LC322271J LC322271T-80 |
2 MEG (131072 words X 16 bits) DRAM Fast Page Mode, Byte Write 2迈可31072字16位），内存快速页面模式，字节
|
Sanyo Electric Co.,Ltd.
Sanyo Electric Co., Ltd.
|
| SLE4442M2.2 SLE4442C SLE4442 SLE4432 SLE4432M2.2 S |
ICS FOR CHIP CARDS INTELLIGENT 256-BYTE EEPROM
From old datasheet system
(SLE4432 / SLE4442) 256 Byte EEPROM
Intelligent 256Bit EEPROM
SERIAL EEPROM,256X8,MOS,WAFER,PLASTIC
SERIAL EEPROM,256X8,MOS,MODULE,8PIN,PLASTIC
|
SIEMENS[Siemens Semiconductor Group]
Infineon Technologies AG
|
| MSM511666CL-XXTS-K MSM511666C-XXTS-K MSM511666CL-7 |
65,536-Word X 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO (BYTE WRITE) 65,536字16位动态随机存储器：快速页面模式型江户（字节写
|
OKI SEMICONDUCTOR CO., LTD.
|
